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Quantitative Analysis of Memristance Defined Exponential Model for Multi-bits Titanium Dioxide Memristor Memory CellDAOUD, A. A. D.   , DESSOUKI, A. A. S. , ABUELENIN, S. M. |
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Author keywords
analytical models, memristors, nonvolatile memory, SPICE, tunneling
References keywords
memristor(20), circuits(11), systems(9), model(6), devices(5), spice(4), physics(4), modeling(4), memristive(4), device(4)
Blue keywords are present in both the references section and the paper title.
About this article
Date of Publication: 2016-05-31
Volume 16, Issue 2, Year 2016, On page(s): 75 - 84
ISSN: 1582-7445, e-ISSN: 1844-7600
Digital Object Identifier: 10.4316/AECE.2016.02011
Web of Science Accession Number: 000376996100011
SCOPUS ID: 84974855611
Abstract
The ability to store multiple bits in a single memristor based memory cell is a key feature for high-capacity memory packages. Studying multi-bit memristor circuits requires high accuracy in modelling the memristance change. A memristor model based on a novel definition of memristance is proposed. A design of a single memristor memory cell using the proposed model for the platinum electrodes titanium dioxide memristor is illustrated. A specific voltage pulse is used with varying its parameters (amplitude or pulse width) to store different number of states in a single memristor. New state variation parameters associated with the utilized model are provided and their effects on write and read processes of memristive multi-states are analysed. PSPICE simulations are also held, and they show a good agreement with the data obtained from the analysis. |
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Faculty of Electrical Engineering and Computer Science
Stefan cel Mare University of Suceava, Romania
All rights reserved: Advances in Electrical and Computer Engineering is a registered trademark of the Stefan cel Mare University of Suceava. No part of this publication may be reproduced, stored in a retrieval system, photocopied, recorded or archived, without the written permission from the Editor. When authors submit their papers for publication, they agree that the copyright for their article be transferred to the Faculty of Electrical Engineering and Computer Science, Stefan cel Mare University of Suceava, Romania, if and only if the articles are accepted for publication. The copyright covers the exclusive rights to reproduce and distribute the article, including reprints and translations.
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Disclaimer: Whilst every effort is made by the publishers and editorial board to see that no inaccurate or misleading data, opinions or statements appear in this journal, they wish to make it clear that all information and opinions formulated in the articles, as well as linguistic accuracy, are the sole responsibility of the author.
