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Stefan cel Mare
University of Suceava
Faculty of Electrical Engineering and
Computer Science
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ROMANIA

Print ISSN: 1582-7445
Online ISSN: 1844-7600
WorldCat: 643243560
doi: 10.4316/AECE


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  3/2024 - 4

MINI Logic 1-Bit Adder: A Comparison with Hybrid NMOS-Memristor-Logic Styles Using Ta2O5/Al2O3 Based RRAM Device

NITHYA, N. See more information about NITHYA, N. on SCOPUS See more information about NITHYA, N. on IEEExplore See more information about NITHYA, N. on Web of Science, PARAMASIVAM, K. See more information about PARAMASIVAM, K. on SCOPUS See more information about PARAMASIVAM, K. on SCOPUS See more information about PARAMASIVAM, K. on Web of Science
 
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Download PDF pdficon (4,100 KB) | Citation | Downloads: 263 | Views: 312

Author keywords
adder, CMOS, logic circuits, memristor, thin film devices

References keywords
logic(20), memristor(14), memory(10), cmos(9), circuits(9), systems(7), full(6), design(6), adder(6), electronics(5)
Blue keywords are present in both the references section and the paper title.

About this article
Date of Publication: 2024-08-31
Volume 24, Issue 3, Year 2024, On page(s): 33 - 44
ISSN: 1582-7445, e-ISSN: 1844-7600
Digital Object Identifier: 10.4316/AECE.2024.03004
Web of Science Accession Number: 001306111400004
SCOPUS ID: 85203017771

Abstract
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This study addresses the demand for more efficient logic circuits by focusing on reducing area, power consumption, and delay. As conventional CMOS technology faces scaling and efficiency limitations, integrating emerging memory technologies like Resistive Random Access Memory (RRAM), also known as memristor, offers a promising solution. By replacing conventional PMOS transistors with memristors in CMOS logic, the study leverages the high-off resistance and low-voltage operation of RRAM devices to develop more compact and energy-efficient circuits. The proposed RRAM device is a Metal-Insulator-Metal structure fabricated with Platinum electrodes, Aluminum Oxide and Tantalum Pentoxide insulator layers. It operates with set and reset voltages of 1 V, and its current-voltage characteristics were theoretically modeled using the VTEAM model. A Memristor-based Imply and N-Imply(MINI) logic approach is introduced for XNOR, XOR and 2X1 Multiplexer designs and compared with three other hybrid NMOS-Memristor logics. Implementing 36 different 1-bit adder circuits in the Cadence Virtuoso 45 nm technology, the study evaluates area efficiency, power consumption, and delay. Results show that the memristor-based MINI logic designs are more area and power-efficient than traditional CMOS-based full adders and various optimized CMOS and memristor-based logics. This research underscores the potential of the proposed RRAM device integration in advanced hybrid logic design.


References | Cited By  «-- Click to see who has cited this paper

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References Weight

Web of Science® Citations for all references: 3,156 TCR
SCOPUS® Citations for all references: 3,622 TCR

Web of Science® Average Citations per reference: 102 ACR
SCOPUS® Average Citations per reference: 117 ACR

TCR = Total Citations for References / ACR = Average Citations per Reference

We introduced in 2010 - for the first time in scientific publishing, the term "References Weight", as a quantitative indication of the quality ... Read more

Citations for references updated on 2024-11-02 01:26 in 193 seconds.




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