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JCR Impact Factor: 0.700
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Stefan cel Mare
University of Suceava
Faculty of Electrical Engineering and
Computer Science
13, Universitatii Street
Suceava - 720229
ROMANIA

Print ISSN: 1582-7445
Online ISSN: 1844-7600
WorldCat: 643243560
doi: 10.4316/AECE


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2024-Jun-20
Clarivate Analytics published the InCites Journal Citations Report for 2023. The InCites JCR Impact Factor of Advances in Electrical and Computer Engineering is 0.700 (0.700 without Journal self-cites), and the InCites JCR 5-Year Impact Factor is 0.600.

2023-Jun-28
Clarivate Analytics published the InCites Journal Citations Report for 2022. The InCites JCR Impact Factor of Advances in Electrical and Computer Engineering is 0.800 (0.700 without Journal self-cites), and the InCites JCR 5-Year Impact Factor is 1.000.

2023-Jun-05
SCOPUS published the CiteScore for 2022, computed by using an improved methodology, counting the citations received in 2019-2022 and dividing the sum by the number of papers published in the same time frame. The CiteScore of Advances in Electrical and Computer Engineering for 2022 is 2.0. For "General Computer Science" we rank #134/233 and for "Electrical and Electronic Engineering" we rank #478/738.

2022-Jun-28
Clarivate Analytics published the InCites Journal Citations Report for 2021. The InCites JCR Impact Factor of Advances in Electrical and Computer Engineering is 0.825 (0.722 without Journal self-cites), and the InCites JCR 5-Year Impact Factor is 0.752.

2022-Jun-16
SCOPUS published the CiteScore for 2021, computed by using an improved methodology, counting the citations received in 2018-2021 and dividing the sum by the number of papers published in the same time frame. The CiteScore of Advances in Electrical and Computer Engineering for 2021 is 2.5, the same as for 2020 but better than all our previous results.

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  4/2013 - 3

 HIGHLY CITED PAPER 

A Cell Sizing Technique for Mitigating Logic Soft Errors in Gate-level Designs

PARK, J. K. See more information about PARK, J. K. on SCOPUS See more information about PARK, J. K. on IEEExplore See more information about PARK, J. K. on Web of Science, KIM, J. T. See more information about KIM, J. T. on SCOPUS See more information about KIM, J. T. on SCOPUS See more information about KIM, J. T. on Web of Science
 
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Download PDF pdficon (846 KB) | Citation | Downloads: 927 | Views: 4,812

Author keywords
single event transient, soft error, soft error mitigation, gate-level, gate sizing, cell sizing

References keywords
soft(16), error(15), design(9), circuits(6), combinational(5), analysis(5), systems(4), rate(4), logic(4), designs(4)
Blue keywords are present in both the references section and the paper title.

About this article
Date of Publication: 2013-11-30
Volume 13, Issue 4, Year 2013, On page(s): 13 - 18
ISSN: 1582-7445, e-ISSN: 1844-7600
Digital Object Identifier: 10.4316/AECE.2013.04003
Web of Science Accession Number: 000331461300003
SCOPUS ID: 84890160731

Abstract
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The effect of logic soft errors on the degradation of the reliability becomes more crucial in the case of nano-meter semiconductor designs. Several hardening techniques have been reported from the transistor- to system-level. In order to suppress the single event transients originating from logic gates, this paper presents an improved heuristic search utilizing the gate-sizing technique. The algorithm re-orders the gate-traversal to maintain the reduced soft error rates of the preceding logic gates. The preferential candidates for the two successive algorithms are the logic gates near the primary outputs and flip-flops, rather than those of the higher portions of block soft error rate. The proposed technique reduces the logic soft error rate by more than 60% compared to the existing method in 45nm CMOS cell designs.


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Cited-By Clarivate Web of Science

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SCOPUS® Times Cited: 1
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Cited-By CrossRef

[1] An Evolutionary Approach to the Soft Error Mitigation Technique for Cell-Based Design, PARK, J. K., KIM, J. T., Advances in Electrical and Computer Engineering, ISSN 1582-7445, Issue 1, Volume 15, 2015.
Digital Object Identifier: 10.4316/AECE.2015.01005
[CrossRef] [Full text]

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Faculty of Electrical Engineering and Computer Science
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