| 1/2019 - 8 |
Design Options for Current Limit and Power Limit Circuit Protections for LDOsPLESA, C.-S.   , DIMITRIU, B. , NEAG, M. |
Extra paper information in    |
| Click to see author's profile in SCOPUS, IEEE Xplore, Web of Science |
Download PDF  (1,394 KB) | Citation | Downloads: 3,786 | Views: 4,546 |
Author keywords
current limiters, power dissipation, power system protection, short-circuit currents, thermal analysis
References keywords
current(14), protection(10), circuit(8), voltage(6), regulator(6), temperature(5), limit(5), regulators(4), high(4), circuits(4)
Blue keywords are present in both the references section and the paper title.
About this article
Date of Publication: 2019-02-28
Volume 19, Issue 1, Year 2019, On page(s): 57 - 62
ISSN: 1582-7445, e-ISSN: 1844-7600
Digital Object Identifier: 10.4316/AECE.2019.01008
Web of Science Accession Number: 000459986900008
SCOPUS ID: 85064055060
Abstract
This paper presents novel circuitry for protection of the power transistor in LDOs with adjustable output voltage implemented in BJT technologies. First, an improvement is proposed to a current limit circuit reported previously, that significantly reduces the variation of the value the output current is limited to, caused by setting the output voltage to different values. Next, two circuits for ensuring that the power transistor operates within its safe operating area are introduced; they are based on the proposed current limit circuit, but its activation point is no longer proportional to the output current but to the sum of the output current and a current proportional to the voltage drop across the power transistor. Finally, a circuit that monitors and limits the power dissipated is described; it also employs the proposed current limit circuit but this time the activation point is proportional to the product of the output current and the voltage drop across the power transistor. Three LDOs that employ the three types of protections proposed here are then compared, considering the power dissipated by the power transistor and the resulting maximum die temperature. |
| References | | | Cited By |
Web of Science® Times Cited: 1 [View]
View record in Web of Science® [View]
View Related Records® [View]
Updated today
SCOPUS® Times Cited: 1
View record in SCOPUS® [Free preview]
View citations in SCOPUS® [Free preview]
Updated today
There are no citing papers in the CrossRef Cited-by Linking system.
Updated today
Disclaimer: All information displayed above was retrieved by using remote connections to respective databases. For the best user experience, we update all data by using background processes, and use caches in order to reduce the load on the servers we retrieve the information from. As we have no control on the availability of the database servers and sometimes the Internet connectivity may be affected, we do not guarantee the information is correct or complete. For the most accurate data, please always consult the database sites directly. Some external links require authentication or an institutional subscription.
Web of Science® is a registered trademark of Clarivate Analytics, Scopus® is a registered trademark of Elsevier B.V., other product names, company names, brand names, trademarks and logos are the property of their respective owners.
Copyright ©2001-2024
Faculty of Electrical Engineering and Computer Science
Stefan cel Mare University of Suceava, Romania
All rights reserved: Advances in Electrical and Computer Engineering is a registered trademark of the Stefan cel Mare University of Suceava. No part of this publication may be reproduced, stored in a retrieval system, photocopied, recorded or archived, without the written permission from the Editor. When authors submit their papers for publication, they agree that the copyright for their article be transferred to the Faculty of Electrical Engineering and Computer Science, Stefan cel Mare University of Suceava, Romania, if and only if the articles are accepted for publication. The copyright covers the exclusive rights to reproduce and distribute the article, including reprints and translations.
Permission for other use: The copyright owner's consent does not extend to copying for general distribution, for promotion, for creating new works, or for resale. Specific written permission must be obtained from the Editor for such copying. Direct linking to files hosted on this website is strictly prohibited.
Disclaimer: Whilst every effort is made by the publishers and editorial board to see that no inaccurate or misleading data, opinions or statements appear in this journal, they wish to make it clear that all information and opinions formulated in the articles, as well as linguistic accuracy, are the sole responsibility of the author.
Faculty of Electrical Engineering and Computer Science
Stefan cel Mare University of Suceava, Romania
All rights reserved: Advances in Electrical and Computer Engineering is a registered trademark of the Stefan cel Mare University of Suceava. No part of this publication may be reproduced, stored in a retrieval system, photocopied, recorded or archived, without the written permission from the Editor. When authors submit their papers for publication, they agree that the copyright for their article be transferred to the Faculty of Electrical Engineering and Computer Science, Stefan cel Mare University of Suceava, Romania, if and only if the articles are accepted for publication. The copyright covers the exclusive rights to reproduce and distribute the article, including reprints and translations.
Permission for other use: The copyright owner's consent does not extend to copying for general distribution, for promotion, for creating new works, or for resale. Specific written permission must be obtained from the Editor for such copying. Direct linking to files hosted on this website is strictly prohibited.
Disclaimer: Whilst every effort is made by the publishers and editorial board to see that no inaccurate or misleading data, opinions or statements appear in this journal, they wish to make it clear that all information and opinions formulated in the articles, as well as linguistic accuracy, are the sole responsibility of the author.
