2/2009 - 8 |
A New Linearization Technique Using Multi-sinh DoubletBOZOMITU, R. G. , CEHAN, V. , POPA, V. |
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Author keywords
CCII, doublet, linearization, multi-tanh, multi-sinh, transconductor
References keywords
circuits(7), mode(4), gain(4), current(4), analog(4)
No common words between the references section and the paper title.
About this article
Date of Publication: 2009-06-02
Volume 9, Issue 2, Year 2009, On page(s): 45 - 57
ISSN: 1582-7445, e-ISSN: 1844-7600
Digital Object Identifier: 10.4316/AECE.2009.02008
Web of Science Accession Number: 000268723600008
SCOPUS ID: 70349391115
Abstract
In this paper a new linearization technique using multi-sinh doublet, implemented with a second generation current conveyor is presented. This new linearization technique is compared with the one based on multi-tanh doublets with linearization series connected diodes on the branches. The comparative study of the two linearization techniques is carried out using both dynamic range analysis, expressed by linearity error and the THD value calculation of output current, and the noise behavior of the two analyzed doublets. For the multi-sinh linearization technique proposed in the paper a method which assures the increase of the dynamic range, keeping the transconductance value constant is presented. This is done by using two design parameters: the number of series connected diodes N, which specifies the desired linear operating range and the k emitters areas ratio of the input stage transistors, which establishes the transconductance value. In the paper is also shown that if the transconductances of the two analyzed doublets are identical, and for the same values of N and k parameters, respectively, the current consumption of the multi-sinh doublet is always smaller than for the multi-tanh doublet. |
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[1] The Analysis of the Polaroid Optocoupler Mechanical-electrical Sensor, CIURUS, I. M., DIMIAN, M., GRAUR, A., Advances in Electrical and Computer Engineering, ISSN 1582-7445, Issue 4, Volume 10, 2010.
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[3] VLSI Design of a 5th-order Gm-C Low-Pass Active Filter in CMOS Technology, Zara, Aurica, Bozomitu, Radu Gabriel, 2021 IEEE 27th International Symposium for Design and Technology in Electronic Packaging (SIITME), ISBN 978-1-6654-2110-2, 2021.
Digital Object Identifier: 10.1109/SIITME53254.2021.9663685 [CrossRef]
[4] A new differential CCII transconductor with increased linearity in bipolar technology, Bozomitu, R. G., Cehan, Vl., ISSCS 2011 - International Symposium on Signals, Circuits and Systems, ISBN 978-1-61284-944-7, 2011.
Digital Object Identifier: 10.1109/ISSCS.2011.5978692 [CrossRef]
[5] Modelling and simulation of a high-voltage direct current ballistic circuit breaker, Dobrej, Robert Alexandru, Oles, Iulian, Negrescu, Cristian, Stanomir, Dumitru, 2016 39th International Spring Seminar on Electronics Technology (ISSE), ISBN 978-1-5090-1389-0, 2016.
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Stefan cel Mare University of Suceava, Romania
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