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Thermal Impact on the Power Device Behaviour: Application on the IGBTHALLOUCHE, A., TILMATNE, A.
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punch-trough IGBT, high frequency, temperature of junction, tailing current
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About this article
Date of Publication: 2007-04-02
Volume 7, Issue 1, Year 2007, On page(s): 9 - 12
ISSN: 1582-7445, e-ISSN: 1844-7600
Digital Object Identifier: 10.4316/AECE.2007.01002
Web of Science Accession Number: 000259841200002
The functional limits of an IGBT are defined by an essential parameter: the maximum junction temperature permitted. The technical specifications of each IGBT type provide the limit values of the functional temperature for example, from -55 C to 150 C. The electrical energy dissipated by the IGBT for any current direction, appears in form of thermal energy at the junctions level. But we should bear in mind that the ambient temperature represents an energetic level through which is insured the raise of the junction temperature.
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 Structure for Improving Short-Circuit Capability and the Method for Protecting the IGBT Devices, HALLOUCHE, A., TILMATINE, A., Advances in Electrical and Computer Engineering, ISSN 1582-7445, Issue 2, Volume 8, 2008.
Digital Object Identifier: 10.4316/aece.2008.02002 [CrossRef] [Full text]
 Junction Temperature Prediction of IGBT Power Module Based on BP Neural Network, Wu, Junke, Zhou, Luowei, Du, Xiong, Sun, Pengju, Journal of Electrical Engineering and Technology, ISSN 1975-0102, Issue 3, Volume 9, 2014.
Digital Object Identifier: 10.5370/JEET.2014.9.3.970 [CrossRef]
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Faculty of Electrical Engineering and Computer Science
Stefan cel Mare University of Suceava, Romania
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